Contribution to a conference proceedings

FZJ-2026-02767

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png SOI-Based Nanowire Field-Effect Transistor Biosensors with Diamond-Like Carbon Modification

Long, H. (Corresponding author)FZJ* ; Zhang, Y.FZJ* ; Zhulai, D.FZJ* ; Boichuk, N.FZJ* ; Pustovyi, D.FZJ* ; Chekubasheva, V.FZJ* ; Vitusevich, S. (Corresponding author)FZJ*

2026

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Please use a persistent id in citations: doi:10.34734/FZJ-2026-02767

Abstract: Silicon Nanowire Field-Effect Transistors (NW FETs) are widely considered as a promising technology for next-generation biosensors due to their advantages of low-cost fabrication, rapid response time and label-free detection. However, they often encounter difficulties in preserving long-term stability and sensitivity when operating in complex biological fluids. In this work, diamond-like carbon (DLC) films with nanometer-scale thicknesses, ranging from 1 nm to 14 nm, were introduced to modify the surface characteristics of low-defect-density silicon dioxide (SiO₂) layers, aiming to enhance their long-term stability.

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Contributing Institute(s):

1. Bioelektronik (IBI-3)

Research Program(s):

1. 5241 - Molecular Information Processing in Cellular Systems (POF4-524) (POF4-524)

Appears in the scientific report 2026

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Database coverage:

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