Journal Article

FZJ-2026-03277

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs

Casiez, L. ; Cardoux, C. ; Acosta Alba, P. ; Bernier, N. ; Richy, J. ; Pauc, N. ; Calvo, V. ; Coudurier, N. ; Rodriguez, P. ; Concepción, O.FZJ* ; Buca, D.FZJ* ; Frauenrath, M. ; Hartmann, J. M. ; Chelnokov, A. ; Reboud, V. (Corresponding author)

2024
Elsevier Science Amsterdam [u.a.]

This record in other databases:    

Please use a persistent id in citations: doi:10.1016/j.mssp.2024.108654

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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