Journal Article

FZJ-2026-05428

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Detection of Read-Disturb Effects in RRAM-Based Computation-in-Memory Architectures for Neural Networks

Yaldagard, M. A. ; Bende, A.FZJ* ; Diware, S. ; Rana, V.FZJ* ; Hamdioui, S. ; Bishnoi, R.

2026
Institute of Electrical and Electronics Engineers New York, NY

This record in other databases:  

Please use a persistent id in citations: doi:10.1109/TCSI.2026.3675336

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

Appears in the scientific report 2026

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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