Journal Article

FZJ-2026-05444

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Chen, S. ; Valov, I.FZJ*

2026
Wiley-VCH Verlag GmbH & Co. KG Weinheim

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Please use a persistent id in citations: doi:10.1002/aelm.202600002

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

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Database coverage:
; ; ; Article Processing Charges ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; DOAJ Seal ; Essential Science Indicators ; Fees ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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