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| Hauptseite > Publikationsdatenbank > Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110) > print |
| Hauptseite > Publikationsdatenbank > Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110) > print |
| 001 | 11172 | ||
| 005 | 20180208200008.0 | ||
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| 100 | 1 | _ | |a Holländer, B. |0 P:(DE-Juel1)125595 |b 0 |u FZJ |
| 111 | 2 | _ | |c Montreal, Canada |d 2010-08-22 |
| 245 | _ | _ | |a Ion channeling strain measurements of uniaxially strained Si/SiGe heterostructures on Si(100) and Si(110) |
| 260 | _ | _ | |c 2010 |
| 295 | 1 | 0 | |a 17th International Conference on Ion Beam Modification of Materials, IBMM2010 |
| 336 | 7 | _ | |a Poster |0 PUB:(DE-HGF)24 |2 PUB:(DE-HGF) |
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| 700 | 1 | _ | |a Hartmann, J.-M. |0 P:(DE-HGF)0 |b 6 |
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| 914 | 1 | _ | |y 2010 |
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