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000111842 1001_ $$0P:(DE-HGF)0$$aSachenko, A.V.$$b0
000111842 245__ $$aFeatures of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
000111842 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
000111842 300__ $$a063703
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000111842 440_0 $$03051$$aJournal of Applied Physics$$v112$$x0021-8979$$y6
000111842 500__ $$3POF3_Assignment on 2016-02-29
000111842 500__ $$aThe authors at ISP acknowledge financial support from the National Academy of Sciences of Ukraine (program "Fundamental problems of nanostructured systems, nanomaterials and nanotechnology") and State program of Ukraine "Nanotechnology and nanomaterials."
000111842 520__ $$aThe temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor concentrations of 5 x 10(16), 3 x 10(17), and 8 x 10(17) cm(-3) was studied experimentally. We found that, after decreasing part of the rho(c)(T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752715]
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000111842 7001_ $$0P:(DE-HGF)0$$aBelyaev, A.E.$$b1
000111842 7001_ $$0P:(DE-HGF)0$$aBoltovets, N.S.$$b2
000111842 7001_ $$0P:(DE-HGF)0$$aVinogradov, A.O.$$b3
000111842 7001_ $$0P:(DE-HGF)0$$aKladko, V.P.$$b4
000111842 7001_ $$0P:(DE-HGF)0$$aKonakova, R.V.$$b5
000111842 7001_ $$0P:(DE-HGF)0$$aKudryk, Ya.Ya$$b6
000111842 7001_ $$0P:(DE-HGF)0$$aKuchuk, A.V.$$b7
000111842 7001_ $$0P:(DE-HGF)0$$aSheremet, V.N.$$b8
000111842 7001_ $$0P:(DE-Juel1)128738$$aVitusevich, S.A.$$b9$$uFZJ
000111842 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4752715$$gVol. 112, p. 063703$$p063703$$q112<063703$$tJournal of applied physics$$v112$$x0021-8979$$y2012
000111842 8567_ $$uhttp://dx.doi.org/10.1063/1.4752715
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