TY  - JOUR
AU  - Sachenko, A.V.
AU  - Belyaev, A.E.
AU  - Boltovets, N.S.
AU  - Vinogradov, A.O.
AU  - Kladko, V.P.
AU  - Konakova, R.V.
AU  - Kudryk, Ya.Ya
AU  - Kuchuk, A.V.
AU  - Sheremet, V.N.
AU  - Vitusevich, S.A.
TI  - Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
JO  - Journal of applied physics
VL  - 112
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-111842
SP  - 063703
PY  - 2012
N1  - The authors at ISP acknowledge financial support from the National Academy of Sciences of Ukraine (program "Fundamental problems of nanostructured systems, nanomaterials and nanotechnology") and State program of Ukraine "Nanotechnology and nanomaterials."
AB  - The temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor concentrations of 5 x 10(16), 3 x 10(17), and 8 x 10(17) cm(-3) was studied experimentally. We found that, after decreasing part of the rho(c)(T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752715]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000309423200057
DO  - DOI:10.1063/1.4752715
UR  - https://juser.fz-juelich.de/record/111842
ER  -