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@ARTICLE{Sachenko:111842,
      author       = {Sachenko, A.V. and Belyaev, A.E. and Boltovets, N.S. and
                      Vinogradov, A.O. and Kladko, V.P. and Konakova, R.V. and
                      Kudryk, Ya.Ya and Kuchuk, A.V. and Sheremet, V.N. and
                      Vitusevich, S.A.},
      title        = {{F}eatures of temperature dependence of contact resistivity
                      in ohmic contacts on lapped n-{S}i},
      journal      = {Journal of applied physics},
      volume       = {112},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-111842},
      pages        = {063703},
      year         = {2012},
      note         = {The authors at ISP acknowledge financial support from the
                      National Academy of Sciences of Ukraine (program
                      "Fundamental problems of nanostructured systems,
                      nanomaterials and nanotechnology") and State program of
                      Ukraine "Nanotechnology and nanomaterials."},
      abstract     = {The temperature dependence of contact resistivity rho(c) in
                      lapped silicon specimens with donor concentrations of 5 x
                      10(16), 3 x 10(17), and 8 x 10(17) cm(-3) was studied
                      experimentally. We found that, after decreasing part of the
                      rho(c)(T) curve in the low temperature range, an increasing
                      part is registered with increasing temperature T. It is
                      demonstrated that the formation of contact to a lapped Si
                      wafer results in the generation of high dislocation density
                      in the near-surface region of the semiconductor and also in
                      ohmic contact behavior. In this case, current flows through
                      the metal shunts associated with dislocations. The theory
                      developed is in good agreement with experimental results.
                      (C) 2012 American Institute of Physics.
                      [http://dx.doi.org/10.1063/1.4752715]},
      keywords     = {J (WoSType)},
      cin          = {ICS-8 / JARA-FIT / PGI-8},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ICS-8-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-8-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      BioSoft: Makromolekulare Systeme und biologische
                      Informationsverarbeitung},
      pid          = {G:(DE-Juel1)FUEK412 / G:(DE-Juel1)FUEK505},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000309423200057},
      doi          = {10.1063/1.4752715},
      url          = {https://juser.fz-juelich.de/record/111842},
}