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| Hauptseite > Publikationsdatenbank > Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si > print |
| Hauptseite > Publikationsdatenbank > Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si > print |
| 001 | 111842 | ||
| 005 | 20240619091047.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1063/1.4752715 |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Sachenko, A.V. |b 0 |
| 245 | _ | _ | |a Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2012 |
| 300 | _ | _ | |a 063703 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 440 | _ | 0 | |0 3051 |a Journal of Applied Physics |v 112 |x 0021-8979 |y 6 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a The authors at ISP acknowledge financial support from the National Academy of Sciences of Ukraine (program "Fundamental problems of nanostructured systems, nanomaterials and nanotechnology") and State program of Ukraine "Nanotechnology and nanomaterials." |
| 520 | _ | _ | |a The temperature dependence of contact resistivity rho(c) in lapped silicon specimens with donor concentrations of 5 x 10(16), 3 x 10(17), and 8 x 10(17) cm(-3) was studied experimentally. We found that, after decreasing part of the rho(c)(T) curve in the low temperature range, an increasing part is registered with increasing temperature T. It is demonstrated that the formation of contact to a lapped Si wafer results in the generation of high dislocation density in the near-surface region of the semiconductor and also in ohmic contact behavior. In this case, current flows through the metal shunts associated with dislocations. The theory developed is in good agreement with experimental results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752715] |
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| 773 | _ | _ | |0 PERI:(DE-600)1476463-5 |a 10.1063/1.4752715 |g Vol. 112, p. 063703 |p 063703 |q 112<063703 |t Journal of applied physics |v 112 |x 0021-8979 |y 2012 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.4752715 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/111842/files/FZJ-111842.pdf |y Published under German "Allianz" Licensing conditions on 2012-09-19. Available in OpenAccess from 2012-09-19 |z Published final document. |
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