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@ARTICLE{Yu:111882,
      author       = {Yu, W. and Zhang, B. and Zhao, Q.T. and Buca, D. and
                      Hartmann, J.-M. and Lupták, R. and Mussler, G. and Fox, A.
                      and Bourdelle, K.K. and Wang, X. and Mantl, S.},
      title        = {{H}ole {M}obilities of {S}i/{S}i0.5{G}e0.5 {Q}uantum-{W}ell
                      {T}ransistor on {SOI} and {S}trained {SOI}},
      journal      = {IEEE electron device letters},
      volume       = {33},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-111882},
      pages        = {758 - 760},
      year         = {2012},
      note         = {Record converted from VDB: 16.11.2012},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000305835000006},
      doi          = {10.1109/LED.2012.2190035},
      url          = {https://juser.fz-juelich.de/record/111882},
}