Journal Article PreJuSER-111882

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Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

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2012
IEEE New York, NY

IEEE electron device letters 33, 758 - 760 () [10.1109/LED.2012.2190035]

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Note: Record converted from VDB: 16.11.2012

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012
Database coverage:
Current Contents - Life Sciences ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Document types > Articles > Journal Article
JARA > JARA > JARA-JARA\-FIT
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 Record created 2012-11-16, last modified 2019-01-08



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