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005     20190108130150.0
024 7 _ |2 ISSN
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024 7 _ |2 ISSN
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|a 10.1109/LED.2012.2190035
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245 _ _ |a Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
260 _ _ |a New York, NY
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|b IEEE
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300 _ _ |a 758 - 760
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|a IEEE Electron Device Letters
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700 1 _ |0 P:(DE-Juel1)125569
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700 1 _ |0 P:(DE-HGF)0
|a Wang, X.
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