TY  - JOUR
AU  - Minamisawa, R.A.
AU  - Schmidt, M.
AU  - Knoll, L.
AU  - Buca, D.
AU  - Zhao, Q.T.
AU  - Hartmann, J.-M.
AU  - Bourdelle, K.K.
AU  - Mantl, S.
TI  - Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations
JO  - IEEE electron device letters
VL  - 33
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-111883
SP  - 1105 - 1107
PY  - 2012
N1  - Manuscript received April 9, 2012; accepted May 9, 2012. Date of publication July 3, 2012; date of current version July 20, 2012. This work was supported in part by the German Federal Ministry of Education and Research via the MEDEA+project DECISIF under Grant 2T104. The review of this letter was arranged by Editor L. Selmi.
AB  - Hole velocity and mobility are extracted from quantum-well (QW) biaxially strained Si0.5Ge0.5 channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on silicon-on-insulator wafers. Devices have been fabricated at sub-100-nm gate length with HfO2/TiN gate stacks. A significant hole mobility enhancement over the strained Si mobility curve is observed for QW MOSFETs. We also discuss the relationship between velocity and mobility of the strained SiGe channels with high Ge content for < 100 > and < 110 > crystal directions. Whereas the mobility increases by 18% for < 100 > with respect to < 110 >, it translates into a modest 8% velocity increase.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000306923700003
DO  - DOI:10.1109/LED.2012.2199958
UR  - https://juser.fz-juelich.de/record/111883
ER  -