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@ARTICLE{Minamisawa:111883,
      author       = {Minamisawa, R.A. and Schmidt, M. and Knoll, L. and Buca, D.
                      and Zhao, Q.T. and Hartmann, J.-M. and Bourdelle, K.K. and
                      Mantl, S.},
      title        = {{H}ole {T}ransport in {S}trained {S}i0.5{G}e0.5
                      {QW}-{MOSFET}s with $\<110\>$ and $\<100\>$ {C}hannel
                      {O}rientations},
      journal      = {IEEE electron device letters},
      volume       = {33},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-111883},
      pages        = {1105 - 1107},
      year         = {2012},
      note         = {Manuscript received April 9, 2012; accepted May 9, 2012.
                      Date of publication July 3, 2012; date of current version
                      July 20, 2012. This work was supported in part by the German
                      Federal Ministry of Education and Research via the
                      MEDEA+project DECISIF under Grant 2T104. The review of this
                      letter was arranged by Editor L. Selmi.},
      abstract     = {Hole velocity and mobility are extracted from quantum-well
                      (QW) biaxially strained Si0.5Ge0.5 channel
                      metal-oxide-semiconductor field-effect transistors (MOSFETs)
                      on silicon-on-insulator wafers. Devices have been fabricated
                      at sub-100-nm gate length with HfO2/TiN gate stacks. A
                      significant hole mobility enhancement over the strained Si
                      mobility curve is observed for QW MOSFETs. We also discuss
                      the relationship between velocity and mobility of the
                      strained SiGe channels with high Ge content for < 100 > and
                      < 110 > crystal directions. Whereas the mobility increases
                      by $18\%$ for < 100 > with respect to < 110 >, it translates
                      into a modest $8\%$ velocity increase.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {620},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000306923700003},
      doi          = {10.1109/LED.2012.2199958},
      url          = {https://juser.fz-juelich.de/record/111883},
}