Hauptseite > Publikationsdatenbank > Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations > print

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024 7 _ |2 DOI
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245 _ _ |a Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations
260 _ _ |a Amsterdam [u.a.]
|b Elsevier
|c 2012
300 _ _ |a 3332 - 3336
336 7 _ |a Journal Article
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700 1 _ |0 P:(DE-Juel1)125569
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