Journal Article

PreJuSER-111888

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations

Habicht, S.FZJ* ; Feste, S.FZJ* ; Zhao, Q. T.FZJ* ; Buca, D.FZJ* ; Mantl, S.FZJ*

2012
Elsevier Amsterdam [u.a.]

This record in other databases:    

Please use a persistent id in citations: doi:10.1016/j.tsf.2011.08.034

Note: Record converted from VDB: 16.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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