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@INPROCEEDINGS{Reiner:111900,
      author       = {Reiner, M. and Aslam, N. and Hoffmann-Eifert, S. and Waser,
                      R.},
      title        = {{A}tomic layer deposition of {T}i{O}2 by {TDMAT} and
                      {H}2{O} for resistive switching applications},
      reportid     = {PreJuSER-111900},
      year         = {2012},
      note         = {Record converted from VDB: 16.11.2012},
      comment      = {Novel High-k Application Workshop},
      booktitle     = {Novel High-k Application Workshop},
      month         = {Jan},
      date          = {2012-01-24},
      organization  = {Dresden, 24 Jan 2012},
      cin          = {PGI-7 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/111900},
}