Home > Publications database > Atomic layer deposition of TiO2 by TDMAT and H2O for resistive switching applications > print

001     111900
005     20180211164405.0
037 _ _ |a PreJuSER-111900
100 1 _ |a Reiner, M.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB103116
111 2 _ |c Dresden
|d 2012-01-24
245 _ _ |a Atomic layer deposition of TiO2 by TDMAT and H2O for resistive switching applications
260 _ _ |c 2012
295 1 0 |a Novel High-k Application Workshop
336 7 _ |a Conference Presentation
|0 PUB:(DE-HGF)6
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a INPROCEEDINGS
|2 BibTeX
500 _ _ |a Record converted from VDB: 16.11.2012
500 _ _ |3 Presentation on a conference
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
700 1 _ |a Aslam, N.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB101586
700 1 _ |a Hoffmann-Eifert, S.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB3102
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
909 C O |o oai:juser.fz-juelich.de:111900
|p VDB
913 1 _ |b Schlüsseltechnologien
|k P42
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|1 G:(DE-HGF)POF2-420
|0 G:(DE-Juel1)FUEK412
|2 G:(DE-HGF)POF2-400
|v Grundlagen für zukünftige Informationstechnologien
|x 0
914 1 _ |y 2012
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|g PGI
|x 0
920 1 _ |0 I:(DE-82)080009_20140620
|k JARA-FIT
|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
|g JARA
|x 1
970 _ _ |a VDB:(DE-Juel1)140525
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a conf
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)VDB881

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21