000112050 001__ 112050
000112050 005__ 20180211164739.0
000112050 037__ $$aPreJuSER-112050
000112050 1001_ $$0P:(DE-Juel1)VDB69007$$aYu, W.$$b0$$uFZJ
000112050 1112_ $$cShanghai, China$$d2012-05-14
000112050 245__ $$aHole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI heterostructure
000112050 260__ $$c2012
000112050 29510 $$a12th international Workshop on Junction Technology (IWJT-2012)
000112050 3367_ $$0PUB:(DE-HGF)31$$2PUB:(DE-HGF)$$aTalk (non conference)
000112050 3367_ $$033$$2EndNote$$aConference Paper
000112050 3367_ $$2DataCite$$aOther
000112050 3367_ $$2DINI$$aOther
000112050 3367_ $$2BibTeX$$aINPROCEEDINGS
000112050 3367_ $$2ORCID$$aLECTURE_SPEECH
000112050 500__ $$aRecord converted from VDB: 16.11.2012
000112050 500__ $$3Talk (non conference)
000112050 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000112050 7001_ $$0P:(DE-Juel1)VDB83419$$aZhang, B.$$b1$$uFZJ
000112050 7001_ $$0P:(DE-Juel1)VDB97138$$aZhao, Q.T.$$b2$$uFZJ
000112050 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b3$$uFZJ
000112050 7001_ $$0P:(DE-HGF)0$$aWang, X.$$b4
000112050 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b5$$uFZJ
000112050 909CO $$ooai:juser.fz-juelich.de:112050$$pVDB
000112050 9131_ $$0G:(DE-Juel1)FUEK412$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000112050 9141_ $$y2012
000112050 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000112050 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000112050 970__ $$aVDB:(DE-Juel1)140724
000112050 980__ $$aVDB
000112050 980__ $$aConvertedRecord
000112050 980__ $$atalk
000112050 980__ $$aI:(DE-Juel1)PGI-9-20110106
000112050 980__ $$aI:(DE-82)080009_20140620
000112050 980__ $$aUNRESTRICTED
000112050 981__ $$aI:(DE-Juel1)VDB881