Hauptseite > Publikationsdatenbank > Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI heterostructure > print

001     112050
005     20180211164739.0
037 _ _ |a PreJuSER-112050
100 1 _ |a Yu, W.
|b 0
|u FZJ
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111 2 _ |c Shanghai, China
|d 2012-05-14
245 _ _ |a Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI heterostructure
260 _ _ |c 2012
295 1 0 |a 12th international Workshop on Junction Technology (IWJT-2012)
336 7 _ |a Talk (non conference)
|0 PUB:(DE-HGF)31
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a Other
|2 DINI
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a LECTURE_SPEECH
|2 ORCID
500 _ _ |a Record converted from VDB: 16.11.2012
500 _ _ |3 Talk (non conference)
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
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700 1 _ |a Zhang, B.
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700 1 _ |a Zhao, Q.T.
|b 2
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700 1 _ |a Buca, D.
|b 3
|u FZJ
|0 P:(DE-Juel1)125569
700 1 _ |a Wang, X.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Mantl, S.
|b 5
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909 C O |o oai:juser.fz-juelich.de:112050
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913 1 _ |b Schlüsseltechnologien
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914 1 _ |y 2012
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
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920 1 _ |0 I:(DE-82)080009_20140620
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980 _ _ |a talk
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980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)VDB881

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