Journal Article

PreJuSER-11274

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Minority-carrier properties of microcrystalline germanium

Badran, R. I. ; Brüggemann, R. ; Carius, R.FZJ*

2009
INOE & INFM Bucharest

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Abstract: The ambipolar diffusion length and the minority-carrier mobility-lifetime products of microcrystalline hydrogenated germanium thin films, prepared by plasma enhanced chemical vapour deposition, are investigated by using the steady-state photocarrier technique. Different thin film samples were deposited with the dilution of the process gases, germane in hydrogen, GC = [GeH4]/[H-2], between 0.2% to 1%. The minority-carrier mobility-lifetime products are almost temperature independent. These results are consistent with a temperature-independent occupation of the negatively charged recombination centres that is determined by the Fermi level. The longest diffusion length was determined for GC = 0.2%, in agreement with earlier complementary results on sensors.

Keyword(s): J ; Microcrystalline germanium (auto) ; Electrical properties (auto) ; Diffusion length (auto)

Note: One of the authors (RIB) would like to thank the Deutsche Forschungsgemeinschaft (DFG), Bonn, for the financial support. RIB is grateful to Dr. R. Bruggemann at the University of Oldenburg and Dr. R. Carius at Forschungszentrum Juich, Germany, for their kind hospitality during a visit. The authors thank M. Krause, Julich, for sample deposition. Technical assistance by P. Pargmann, Oldenburg, is also acknowledged.

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Contributing Institute(s):

1. Photovoltaik (IEF-5)

Research Program(s):

1. Erneuerbare Energien (P11)

Appears in the scientific report 2009
Notes: Nachtrag

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