Journal Article

PreJuSER-11287

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Habicht, S.FZJ* ; Zhao, Q. T.FZJ* ; Feste, S. F.FZJ* ; Knoll, L.FZJ* ; Trellenkamp, S.FZJ* ; Ghyselen, B. ; Mantl, S.FZJ*

2010
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/21/10/105701

Abstract: We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.

Keyword(s): Electric Conductivity (MeSH) ; Microscopy, Electron, Scanning (MeSH) ; Nanotechnology: methods (MeSH) ; Nanowires: chemistry (MeSH) ; Nanowires: ultrastructure (MeSH) ; Nickel: chemistry (MeSH) ; Silicon: chemistry (MeSH) ; Silicon Compounds: chemistry (MeSH) ; Temperature (MeSH) ; Silicon Compounds ; nickel silicide ; Nickel ; Silicon ; J

Note: This work was supported by the German Federal Ministry of Education and Research via the MEDEA + project DECISIF (2T104) and by Nanosil funding from the European Community ( FP7 grant no. 216171).

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Prozesstechnologie (IBN-PT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)
2. NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171) (216171)

Appears in the scientific report 2010

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