%0 Journal Article
%A Cheng, X.
%A Xu, D.
%A Sun, Q.-Q.
%A He, D.
%A Wang, Z.
%A Yu, Y.
%A Zhang, D.W.
%A Zhao, Q.
%T Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
%J Applied physics letters
%V 96
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-11289
%P 022904
%D 2010
%Z This work was supported by the following Chinese foundation: NSF (Grant No. 10775166), Zhejiang Province STF (Grant No. 2008C31002), and Wenzou STF (Grant No. G20060099).
%X Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm(2) at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000273689400046
%R 10.1063/1.3292217
%U https://juser.fz-juelich.de/record/11289