Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

Cheng, X.; Zhang, D.W.; Zhao, Q.; He, D.; Xu, D.; Wang, Z.; Yu, Y.; Sun, Q.-Q.

doi:10.1063/1.3292217

Journal Article

Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP

Cheng, X. ; Xu, D. ; Sun, Q.-Q. ; He, D. ; Wang, Z. ; Yu, Y.FZJ* ; Zhang, D. W. ; Zhao, Q.FZJ*

2010
American Institute of Physics Melville, NY

Applied physics letters 96, 022904 (2010) [10.1063/1.3292217]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17280 doi:10.1063/1.3292217

Abstract: Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm(2) at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.

Keyword(s): J ; alumina (auto) ; current density (auto) ; dielectric thin films (auto) ; interface states (auto) ; leakage currents (auto) ; MIS capacitors (auto) ; multilayers (auto) ; niobium compounds (auto) ; oxidation (auto) ; permittivity (auto) ; platinum (auto) ; sandwich structures (auto) ; titanium compounds (auto) ; transmission electron microscopy (auto) ; valence bands (auto) ; X-ray diffraction (auto) ; X-ray photoelectron spectra (auto) ; X-ray reflection (auto)

Classification:

Physics, Applied

Note: This work was supported by the following Chinese foundation: NSF (Grant No. 10775166), Zhejiang Province STF (Grant No. 2008C31002), and Wenzou STF (Grant No. G20060099).

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