000011289 001__ 11289
000011289 005__ 20200423202819.0
000011289 0247_ $$2DOI$$a10.1063/1.3292217
000011289 0247_ $$2WOS$$aWOS:000273689400046
000011289 0247_ $$2Handle$$a2128/17280
000011289 037__ $$aPreJuSER-11289
000011289 041__ $$aeng
000011289 082__ $$a530
000011289 084__ $$2WoS$$aPhysics, Applied
000011289 1001_ $$0P:(DE-HGF)0$$aCheng, X.$$b0
000011289 245__ $$aAl2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
000011289 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000011289 300__ $$a022904
000011289 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000011289 3367_ $$2DataCite$$aOutput Types/Journal article
000011289 3367_ $$00$$2EndNote$$aJournal Article
000011289 3367_ $$2BibTeX$$aARTICLE
000011289 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000011289 3367_ $$2DRIVER$$aarticle
000011289 440_0 $$0562$$aApplied Physics Letters$$v96$$x0003-6951$$y2
000011289 500__ $$aThis work was supported by the following Chinese foundation: NSF (Grant No. 10775166), Zhejiang Province STF (Grant No. 2008C31002), and Wenzou STF (Grant No. G20060099).
000011289 520__ $$aAl2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm(2) at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.
000011289 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000011289 588__ $$aDataset connected to Web of Science
000011289 65320 $$2Author$$aalumina
000011289 65320 $$2Author$$acurrent density
000011289 65320 $$2Author$$adielectric thin films
000011289 65320 $$2Author$$ainterface states
000011289 65320 $$2Author$$aleakage currents
000011289 65320 $$2Author$$aMIS capacitors
000011289 65320 $$2Author$$amultilayers
000011289 65320 $$2Author$$aniobium compounds
000011289 65320 $$2Author$$aoxidation
000011289 65320 $$2Author$$apermittivity
000011289 65320 $$2Author$$aplatinum
000011289 65320 $$2Author$$asandwich structures
000011289 65320 $$2Author$$atitanium compounds
000011289 65320 $$2Author$$atransmission electron microscopy
000011289 65320 $$2Author$$avalence bands
000011289 65320 $$2Author$$aX-ray diffraction
000011289 65320 $$2Author$$aX-ray photoelectron spectra
000011289 65320 $$2Author$$aX-ray reflection
000011289 650_7 $$2WoSType$$aJ
000011289 7001_ $$0P:(DE-HGF)0$$aXu, D.$$b1
000011289 7001_ $$0P:(DE-HGF)0$$aSun, Q.-Q.$$b2
000011289 7001_ $$0P:(DE-HGF)0$$aHe, D.$$b3
000011289 7001_ $$0P:(DE-HGF)0$$aWang, Z.$$b4
000011289 7001_ $$0P:(DE-Juel1)VDB46905$$aYu, Y.$$b5$$uFZJ
000011289 7001_ $$0P:(DE-HGF)0$$aZhang, D.W.$$b6
000011289 7001_ $$0P:(DE-Juel1)VDB56356$$aZhao, Q.$$b7$$uFZJ
000011289 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3292217$$gVol. 96, p. 022904$$p022904$$q96<022904$$tApplied physics letters$$v96$$x0003-6951$$y2010
000011289 8567_ $$uhttp://dx.doi.org/10.1063/1.3292217
000011289 8564_ $$uhttps://juser.fz-juelich.de/record/11289/files/1.3292217.pdf$$yOpenAccess
000011289 8564_ $$uhttps://juser.fz-juelich.de/record/11289/files/1.3292217.gif?subformat=icon$$xicon$$yOpenAccess
000011289 8564_ $$uhttps://juser.fz-juelich.de/record/11289/files/1.3292217.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000011289 8564_ $$uhttps://juser.fz-juelich.de/record/11289/files/1.3292217.jpg?subformat=icon-700$$xicon-700$$yOpenAccess
000011289 8564_ $$uhttps://juser.fz-juelich.de/record/11289/files/1.3292217.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000011289 909CO $$ooai:juser.fz-juelich.de:11289$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000011289 9141_ $$y2010
000011289 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000011289 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000011289 9131_ $$0G:(DE-Juel1)FUEK412$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000011289 9201_ $$0I:(DE-Juel1)VDB799$$d31.12.2010$$gIBN$$kIBN-1$$lHalbleiter-Nanoelektronik$$x0
000011289 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000011289 970__ $$aVDB:(DE-Juel1)122287
000011289 980__ $$aVDB
000011289 980__ $$aConvertedRecord
000011289 980__ $$ajournal
000011289 980__ $$aI:(DE-Juel1)PGI-9-20110106
000011289 980__ $$aI:(DE-82)080009_20140620
000011289 980__ $$aUNRESTRICTED
000011289 9801_ $$aFullTexts
000011289 981__ $$aI:(DE-Juel1)PGI-9-20110106
000011289 981__ $$aI:(DE-Juel1)VDB881