TY  - JOUR
AU  - Cheng, X.
AU  - Xu, D.
AU  - Sun, Q.-Q.
AU  - He, D.
AU  - Wang, Z.
AU  - Yu, Y.
AU  - Zhang, D.W.
AU  - Zhao, Q.
TI  - Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP
JO  - Applied physics letters
VL  - 96
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-11289
SP  - 022904
PY  - 2010
N1  - This work was supported by the following Chinese foundation: NSF (Grant No. 10775166), Zhejiang Province STF (Grant No. 2008C31002), and Wenzou STF (Grant No. G20060099).
AB  - Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm(2) at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000273689400046
DO  - DOI:10.1063/1.3292217
UR  - https://juser.fz-juelich.de/record/11289
ER  -