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| Home > Publications database > Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP > print |
| 001 | 11289 | ||
| 005 | 20200423202819.0 | ||
| 024 | 7 | _ | |a 10.1063/1.3292217 |2 DOI |
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| 037 | _ | _ | |a PreJuSER-11289 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Cheng, X. |b 0 |
| 245 | _ | _ | |a Al2O3/NbAlO/Al2O3 sandwich gate dielectric film on InP |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
| 300 | _ | _ | |a 022904 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |0 562 |a Applied Physics Letters |v 96 |x 0003-6951 |y 2 |
| 500 | _ | _ | |a This work was supported by the following Chinese foundation: NSF (Grant No. 10775166), Zhejiang Province STF (Grant No. 2008C31002), and Wenzou STF (Grant No. G20060099). |
| 520 | _ | _ | |a Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on InP substrate and annealed. X-ray reflectivity measurements suggested that 1.0 nm interfacial layer existed at InP interface, x-ray diffraction and high resolution transmission electron microscopy indicated the films were crystallized. X-ray photoelectron spectra indicated the oxidization of InP substrate, and the valence-band offset between the dielectric film and InP interface was calculated to be 3.1 eV. The electrical measurements indicated that the leakage current density was 40 mA/cm(2) at gate bias of 1 V, and the equivalent oxide thickness and the dielectric constant were 1.7 and 20 nm, respectively. |
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| 653 | 2 | 0 | |2 Author |a alumina |
| 653 | 2 | 0 | |2 Author |a current density |
| 653 | 2 | 0 | |2 Author |a dielectric thin films |
| 653 | 2 | 0 | |2 Author |a interface states |
| 653 | 2 | 0 | |2 Author |a leakage currents |
| 653 | 2 | 0 | |2 Author |a MIS capacitors |
| 653 | 2 | 0 | |2 Author |a multilayers |
| 653 | 2 | 0 | |2 Author |a niobium compounds |
| 653 | 2 | 0 | |2 Author |a oxidation |
| 653 | 2 | 0 | |2 Author |a permittivity |
| 653 | 2 | 0 | |2 Author |a platinum |
| 653 | 2 | 0 | |2 Author |a sandwich structures |
| 653 | 2 | 0 | |2 Author |a titanium compounds |
| 653 | 2 | 0 | |2 Author |a transmission electron microscopy |
| 653 | 2 | 0 | |2 Author |a valence bands |
| 653 | 2 | 0 | |2 Author |a X-ray diffraction |
| 653 | 2 | 0 | |2 Author |a X-ray photoelectron spectra |
| 653 | 2 | 0 | |2 Author |a X-ray reflection |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Xu, D. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Sun, Q.-Q. |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a He, D. |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Wang, Z. |b 4 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB46905 |a Yu, Y. |b 5 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Zhang, D.W. |b 6 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB56356 |a Zhao, Q. |b 7 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)1469436-0 |a 10.1063/1.3292217 |g Vol. 96, p. 022904 |p 022904 |q 96<022904 |t Applied physics letters |v 96 |x 0003-6951 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3292217 |
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