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000011290 1001_ $$0P:(DE-Juel1)VDB3163$$aTrinkaus, H.$$b0$$uFZJ
000011290 245__ $$aStrain tensors in layer systems by precision ion channeling measurements
000011290 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000011290 300__ $$a124906
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000011290 440_0 $$03051$$aJournal of Applied Physics$$v107$$x0021-8979$$y12
000011290 500__ $$aThis work was partially supported by the German Federal Ministry of Education and Research and the French Ministry of Industry via the MEDEA project DECISIF (2T 104) and by the European Community's Seventh Framework Programme (Grant No. FP7/2007-2013) under Grant Agreement No. 216171.
000011290 520__ $$aA powerful method for analyzing general strain states in layer systems is the measurement of changes in the ion channeling directions. We present a systematic derivation and compilation of the required relations between the strain induced angle changes and the components of the strain tensor for general crystalline layer systems of reduced symmetry compared to the basic (cubic) crystal. It is shown that, for the evaluation of channeling measurements, virtually all layers of interest may be described as being "pseudo-orthorhombic." The commonly assumed boundary conditions and the effects of surface misorientations on them are discussed. Asymmetric strain relaxation in layers of reduced symmetry is attributed to a restriction in the slip system of the dislocations inducing it. The results are applied to {110}SiGe/Si layer systems. (C) 2010 American Institute of Physics. [doi:10.1063/1.3415530]
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000011290 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b2$$uFZJ
000011290 7001_ $$0P:(DE-Juel1)VDB86474$$aMinamisawa, R. A.$$b3$$uFZJ
000011290 7001_ $$0P:(DE-HGF)0$$aHartmann, J.M.$$b4
000011290 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b5$$uFZJ
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