Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.; Buca, D.; Hartmann, J.M.; Holländer, B.; Mantl, S.; Minamisawa, R. A.

doi:10.1063/1.3415530

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.FZJ* ; Buca, D.FZJ* ; Holländer, B.FZJ* ; Minamisawa, R. A.FZJ* ; Hartmann, J. M. ; Mantl, S.FZJ*

2010
American Institute of Physics Melville, NY

Journal of applied physics 107, 124906 (2010) [10.1063/1.3415530]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17222 doi:10.1063/1.3415530

Abstract: A powerful method for analyzing general strain states in layer systems is the measurement of changes in the ion channeling directions. We present a systematic derivation and compilation of the required relations between the strain induced angle changes and the components of the strain tensor for general crystalline layer systems of reduced symmetry compared to the basic (cubic) crystal. It is shown that, for the evaluation of channeling measurements, virtually all layers of interest may be described as being "pseudo-orthorhombic." The commonly assumed boundary conditions and the effects of surface misorientations on them are discussed. Asymmetric strain relaxation in layers of reduced symmetry is attributed to a restriction in the slip system of the dislocations inducing it. The results are applied to {110}SiGe/Si layer systems. (C) 2010 American Institute of Physics. [doi:10.1063/1.3415530]

Keyword(s): J

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Physics, Applied

Note: This work was partially supported by the German Federal Ministry of Education and Research and the French Ministry of Industry via the MEDEA project DECISIF (2T 104) and by the European Community's Seventh Framework Programme (Grant No. FP7/2007-2013) under Grant Agreement No. 216171.

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Appears in the scientific report 2010

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OpenAccess