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@ARTICLE{Trinkaus:11290,
      author       = {Trinkaus, H. and Buca, D. and Holländer, B. and
                      Minamisawa, R. A. and Hartmann, J.M. and Mantl, S.},
      title        = {{S}train tensors in layer systems by precision ion
                      channeling measurements},
      journal      = {Journal of applied physics},
      volume       = {107},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-11290},
      pages        = {124906},
      year         = {2010},
      note         = {This work was partially supported by the German Federal
                      Ministry of Education and Research and the French Ministry
                      of Industry via the MEDEA project DECISIF (2T 104) and by
                      the European Community's Seventh Framework Programme (Grant
                      No. FP7/2007-2013) under Grant Agreement No. 216171.},
      abstract     = {A powerful method for analyzing general strain states in
                      layer systems is the measurement of changes in the ion
                      channeling directions. We present a systematic derivation
                      and compilation of the required relations between the strain
                      induced angle changes and the components of the strain
                      tensor for general crystalline layer systems of reduced
                      symmetry compared to the basic (cubic) crystal. It is shown
                      that, for the evaluation of channeling measurements,
                      virtually all layers of interest may be described as being
                      "pseudo-orthorhombic." The commonly assumed boundary
                      conditions and the effects of surface misorientations on
                      them are discussed. Asymmetric strain relaxation in layers
                      of reduced symmetry is attributed to a restriction in the
                      slip system of the dislocations inducing it. The results are
                      applied to {110}SiGe/Si layer systems. (C) 2010 American
                      Institute of Physics. [doi:10.1063/1.3415530]},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien /
                      NANOSIL - Silicon-based nanostructures and nanodevices for
                      long term nanoelectronics applications (216171)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(EU-Grant)216171},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000279993900169},
      doi          = {10.1063/1.3415530},
      url          = {https://juser.fz-juelich.de/record/11290},
}