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| 001 | 11290 | ||
| 005 | 20200423202820.0 | ||
| 024 | 7 | _ | |a 10.1063/1.3415530 |2 DOI |
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| 037 | _ | _ | |a PreJuSER-11290 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB3163 |a Trinkaus, H. |b 0 |u FZJ |
| 245 | _ | _ | |a Strain tensors in layer systems by precision ion channeling measurements |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
| 300 | _ | _ | |a 124906 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 440 | _ | 0 | |0 3051 |a Journal of Applied Physics |v 107 |x 0021-8979 |y 12 |
| 500 | _ | _ | |a This work was partially supported by the German Federal Ministry of Education and Research and the French Ministry of Industry via the MEDEA project DECISIF (2T 104) and by the European Community's Seventh Framework Programme (Grant No. FP7/2007-2013) under Grant Agreement No. 216171. |
| 520 | _ | _ | |a A powerful method for analyzing general strain states in layer systems is the measurement of changes in the ion channeling directions. We present a systematic derivation and compilation of the required relations between the strain induced angle changes and the components of the strain tensor for general crystalline layer systems of reduced symmetry compared to the basic (cubic) crystal. It is shown that, for the evaluation of channeling measurements, virtually all layers of interest may be described as being "pseudo-orthorhombic." The commonly assumed boundary conditions and the effects of surface misorientations on them are discussed. Asymmetric strain relaxation in layers of reduced symmetry is attributed to a restriction in the slip system of the dislocations inducing it. The results are applied to {110}SiGe/Si layer systems. (C) 2010 American Institute of Physics. [doi:10.1063/1.3415530] |
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| 536 | _ | _ | |0 G:(EU-Grant)216171 |2 European Community |a NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171) |c 216171 |f FP7-ICT-2007-1 |x 1 |
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| 700 | 1 | _ | |0 P:(DE-Juel1)125569 |a Buca, D. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)125595 |a Holländer, B. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB86474 |a Minamisawa, R. A. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Hartmann, J.M. |b 4 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB4959 |a Mantl, S. |b 5 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)1476463-5 |a 10.1063/1.3415530 |g Vol. 107, p. 124906 |p 124906 |q 107<124906 |t Journal of applied physics |v 107 |x 0021-8979 |y 2010 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3415530 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/11290/files/1.3415530.pdf |y OpenAccess |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/11290/files/1.3415530.pdf?subformat=pdfa |x pdfa |y OpenAccess |
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