Contribution to a conference proceedings/Contribution to a book

PreJuSER-11292

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate

Yu, W.FZJ* ; Zhang, B.FZJ* ; Zhao, Q. T.FZJ* ; Hartmann, J.-M. ; Buca, D.FZJ* ; Nichau, A.FZJ* ; Durgun Özben, E.FZJ* ; Lopes, J. M. J.FZJ* ; Schubert, J.FZJ* ; Ghyselen, B. ; Mantl, S.FZJ*

2010

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
Notes: Proceedings

---