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@INPROCEEDINGS{Yu:11292,
      author       = {Yu, W. and Zhang, B. and Zhao, Q. T. and Hartmann, J.-M.
                      and Buca, D. and Nichau, A. and Durgun Özben, E. and Lopes,
                      J. M. J. and Schubert, J. and Ghyselen, B. and Mantl, S.},
      title        = {{S}trained-{S}i{G}e p-{MOSFET} with {L}a{L}u{O}3 as hihg-k
                      gate dielectric and {T}i{N} as metal gate},
      reportid     = {PreJuSER-11292},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {Proceedings of 6th Workshop of the thematic Network on
                      Silicon-on-Insulator Technology (EUROSOI). - 2010. S. 25 -
                      26},
      booktitle     = {Proceedings of 6th Workshop of the
                       thematic Network on
                       Silicon-on-Insulator Technology
                       (EUROSOI). - 2010. S. 25 - 26},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/11292},
}