Contribution to a conference proceedings/Contribution to a book

PreJuSER-11475

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process

Durgun Özben, E.FZJ* ; Lopes, J. M. J.FZJ* ; Roeckerath, M.FZJ* ; Nichau, A.FZJ* ; Luptak, R.FZJ* ; Lenk, S.FZJ* ; Besmehn, A. ; Ghyselen, B. ; Zhao, Q. T.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ*

2010

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
Notes: Proceedings

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