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@INPROCEEDINGS{Durgunzben:11475,
      author       = {Durgun Özben, E. and Lopes, J. M. J. and Roeckerath, M.
                      and Nichau, A. and Luptak, R. and Lenk, S. and Besmehn, A.
                      and Ghyselen, B. and Zhao, Q. T. and Schubert, J. and Mantl,
                      S.},
      title        = {{H}igh mobility strained {SOI} {MOSFET}s with
                      {L}a{S}c{O}3/{T}i{N} gate stacks fabricated with a
                      replacement gate process},
      reportid     = {PreJuSER-11475},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {Proceedings of ULIS (Ultimate Integration on Silicon) 17-19
                      March 2010, Glasgow, Scotland. - S. 93 - 96},
      booktitle     = {Proceedings of ULIS (Ultimate
                       Integration on Silicon) 17-19 March
                       2010, Glasgow, Scotland. - S. 93 - 96},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/11475},
}