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@INPROCEEDINGS{Yu:11478,
      author       = {Yu, W. and Zhang, B. and Zhao, Q. T. and Hartmann, J.M. and
                      Buca, D. and Nichau, A. and Durgun Özben, E. and Lopes, J.
                      M. J. and Schubert, J. and Ghyselen, B. and Mantl, S.},
      title        = {{S}trained-{S}i{G}e p-{MOSFET} with {L}a{L}u{O}3 as high-k
                      gate dielectric and {T}i{N} as metal gate},
      reportid     = {PreJuSER-11478},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {6th Workshop of the thematic Network on
                      Silicon-on-Insulator Technology (EUROSOI)},
      booktitle     = {6th Workshop of the thematic Network
                       on Silicon-on-Insulator Technology
                       (EUROSOI)},
      month         = {Jan},
      date          = {2010-01-25},
      organization  = {Grenoble, France, 25 Jan 2010},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/11478},
}