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High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
Durgun Özben, E.FZJ* ; Lopes, J. M. J.FZJ* ; Roeckerath, M.FZJ* ; Nichau, A.FZJ* ; Luptak, R.FZJ* ; Lenk, S.FZJ* ; Besmehn, A. ; Ghyselen, B.FZJ* ; Zhao, Q. T.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ*
2010
201011thb International Conference on Ultimate Integratuin on Silicon (ULIS)
Seminar, Glasgow, ScotlandGlasgow, Scotland, 18 Mar 20102010-03-18
Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
- Halbleiter-Nanoelektronik (IBN-1)
- Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
- Grundlagen für zukünftige Informationstechnologien (P42)
Appears in the scientific report
2010