000012005 001__ 12005
000012005 005__ 20200423202835.0
000012005 0247_ $$2DOI$$a10.1063/1.3499273
000012005 0247_ $$2WOS$$aWOS:000282765700051
000012005 0247_ $$2Handle$$a2128/18107
000012005 037__ $$aPreJuSER-12005
000012005 041__ $$aeng
000012005 082__ $$a530
000012005 084__ $$2WoS$$aPhysics, Applied
000012005 1001_ $$0P:(DE-HGF)0$$aTenne, D.A.$$b0
000012005 245__ $$aFerroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy
000012005 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000012005 300__ $$a142901
000012005 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000012005 3367_ $$2DataCite$$aOutput Types/Journal article
000012005 3367_ $$00$$2EndNote$$aJournal Article
000012005 3367_ $$2BibTeX$$aARTICLE
000012005 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000012005 3367_ $$2DRIVER$$aarticle
000012005 440_0 $$0562$$aApplied Physics Letters$$v97$$x0003-6951$$y14
000012005 500__ $$aThis work was supported in part by the NSF through Grant Nos. DMR-0705127 (D.A.T.), DMR-0507146 (D.G.S.), ECCS-0708759 (C.B.E.), and DMR-0906443 (C.B.E.) and through the MRSEC program by Grant No. DMR-0820404 (C.M.B), DOE EPSCoR Grant No. DE-FG02-04ER46142 (D.A.T.), and Research Corporation for Science Advancement Grant No. 7134 (D.A.T.).
000012005 520__ $$aHomoepitaxial Sr1+xTiO3+delta films with -0.2 <= x <= 0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Nonstoichiometry for strontium-deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder-activated mechanism in Raman scattering. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499273]
000012005 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000012005 588__ $$aDataset connected to Web of Science
000012005 650_7 $$2WoSType$$aJ
000012005 7001_ $$0P:(DE-HGF)0$$aFarrar, A.K.$$b1
000012005 7001_ $$0P:(DE-HGF)0$$aBrooks, C.M.$$b2
000012005 7001_ $$0P:(DE-HGF)0$$aHeeg, T.$$b3
000012005 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b4$$uFZJ
000012005 7001_ $$0P:(DE-HGF)0$$aJang, H.W.$$b5
000012005 7001_ $$0P:(DE-HGF)0$$aBark, C.W.$$b6
000012005 7001_ $$0P:(DE-HGF)0$$aFolkman, C.M.$$b7
000012005 7001_ $$0P:(DE-HGF)0$$aEom, C.B.$$b8
000012005 7001_ $$0P:(DE-HGF)0$$aSchlom, D.G.$$b9
000012005 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3499273$$gVol. 97, p. 142901$$p142901$$q97<142901$$tApplied physics letters$$v97$$x0003-6951$$y2010
000012005 8567_ $$uhttp://dx.doi.org/10.1063/1.3499273
000012005 8564_ $$uhttps://juser.fz-juelich.de/record/12005/files/1.3499273.pdf$$yOpenAccess
000012005 8564_ $$uhttps://juser.fz-juelich.de/record/12005/files/1.3499273.gif?subformat=icon$$xicon$$yOpenAccess
000012005 8564_ $$uhttps://juser.fz-juelich.de/record/12005/files/1.3499273.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000012005 8564_ $$uhttps://juser.fz-juelich.de/record/12005/files/1.3499273.jpg?subformat=icon-700$$xicon-700$$yOpenAccess
000012005 8564_ $$uhttps://juser.fz-juelich.de/record/12005/files/1.3499273.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000012005 909CO $$ooai:juser.fz-juelich.de:12005$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000012005 9141_ $$y2010
000012005 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000012005 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000012005 9131_ $$0G:(DE-Juel1)FUEK412$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000012005 9201_ $$0I:(DE-Juel1)VDB799$$d31.12.2010$$gIBN$$kIBN-1$$lHalbleiter-Nanoelektronik$$x0
000012005 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000012005 970__ $$aVDB:(DE-Juel1)123463
000012005 980__ $$aVDB
000012005 980__ $$aConvertedRecord
000012005 980__ $$ajournal
000012005 980__ $$aI:(DE-Juel1)PGI-9-20110106
000012005 980__ $$aI:(DE-82)080009_20140620
000012005 980__ $$aUNRESTRICTED
000012005 9801_ $$aFullTexts
000012005 981__ $$aI:(DE-Juel1)PGI-9-20110106
000012005 981__ $$aI:(DE-Juel1)VDB881