Journal Article PreJuSER-12005

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Ferroelectricity in nonstoichiometric SrTiO3 films studied by ultraviolet Raman spectroscopy

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2010
American Institute of Physics Melville, NY

Applied physics letters 97, 142901 () [10.1063/1.3499273]

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Abstract: Homoepitaxial Sr1+xTiO3+delta films with -0.2 <= x <= 0.25 grown by reactive molecular-beam epitaxy on SrTiO3 (001) substrates have been studied by ultraviolet Raman spectroscopy. Nonstoichiometry for strontium-deficient compositions leads to the appearance of strong first-order Raman scattering at low temperatures, which decreases with increasing temperature and disappears at about 350 K. This indicates the appearance of a spontaneous polarization with a paraelectric-to-ferroelectric transition temperature above room temperature. Strontium-rich samples also show a strong first-order Raman signal, but the peaks are significantly broader and exhibit a less pronounced temperature dependence, indicating a stronger contribution of the disorder-activated mechanism in Raman scattering. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499273]

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Note: This work was supported in part by the NSF through Grant Nos. DMR-0705127 (D.A.T.), DMR-0507146 (D.G.S.), ECCS-0708759 (C.B.E.), and DMR-0906443 (C.B.E.) and through the MRSEC program by Grant No. DMR-0820404 (C.M.B), DOE EPSCoR Grant No. DE-FG02-04ER46142 (D.A.T.), and Research Corporation for Science Advancement Grant No. 7134 (D.A.T.).

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

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 Record created 2012-11-13, last modified 2020-04-23