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@ARTICLE{Tenne:12005,
      author       = {Tenne, D.A. and Farrar, A.K. and Brooks, C.M. and Heeg, T.
                      and Schubert, J. and Jang, H.W. and Bark, C.W. and Folkman,
                      C.M. and Eom, C.B. and Schlom, D.G.},
      title        = {{F}erroelectricity in nonstoichiometric {S}r{T}i{O}3 films
                      studied by ultraviolet {R}aman spectroscopy},
      journal      = {Applied physics letters},
      volume       = {97},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-12005},
      pages        = {142901},
      year         = {2010},
      note         = {This work was supported in part by the NSF through Grant
                      Nos. DMR-0705127 (D.A.T.), DMR-0507146 (D.G.S.),
                      ECCS-0708759 (C.B.E.), and DMR-0906443 (C.B.E.) and through
                      the MRSEC program by Grant No. DMR-0820404 (C.M.B), DOE
                      EPSCoR Grant No. DE-FG02-04ER46142 (D.A.T.), and Research
                      Corporation for Science Advancement Grant No. 7134
                      (D.A.T.).},
      abstract     = {Homoepitaxial Sr1+xTiO3+delta films with -0.2 <= x <= 0.25
                      grown by reactive molecular-beam epitaxy on SrTiO3 (001)
                      substrates have been studied by ultraviolet Raman
                      spectroscopy. Nonstoichiometry for strontium-deficient
                      compositions leads to the appearance of strong first-order
                      Raman scattering at low temperatures, which decreases with
                      increasing temperature and disappears at about 350 K. This
                      indicates the appearance of a spontaneous polarization with
                      a paraelectric-to-ferroelectric transition temperature above
                      room temperature. Strontium-rich samples also show a strong
                      first-order Raman signal, but the peaks are significantly
                      broader and exhibit a less pronounced temperature
                      dependence, indicating a stronger contribution of the
                      disorder-activated mechanism in Raman scattering. (C) 2010
                      American Institute of Physics. [doi:10.1063/1.3499273]},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000282765700051},
      doi          = {10.1063/1.3499273},
      url          = {https://juser.fz-juelich.de/record/12005},
}