Hauptseite > Publikationsdatenbank > Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications > print

001     12021
005     20180208223346.0
037 _ _ |a PreJuSER-12021
100 1 _ |a Moers, J.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB5547
111 2 _ |c Regensburg
|d 2010-03-21
245 _ _ |a Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications
260 _ _ |c 2010
295 1 0 |a DPG-Frühjahrstagung
336 7 _ |a Talk (non conference)
|0 PUB:(DE-HGF)31
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a Other
|2 DINI
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a LECTURE_SPEECH
|2 ORCID
500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Talk (non conference)
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
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700 1 _ |a Gerharz, J.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB76721
700 1 _ |a Mussler, G.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB72747
700 1 _ |a Biasotto, C.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Jovanovic, V.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Nanver, L.
|b 5
|0 P:(DE-HGF)0
700 1 _ |a Grützmacher, D.
|b 6
|u FZJ
|0 P:(DE-Juel1)125588
909 C O |o oai:juser.fz-juelich.de:12021
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913 1 _ |k P42
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|b Schlüsseltechnologien
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|x 0
914 1 _ |y 2010
920 1 _ |d 31.12.2010
|g IBN
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|l Halbleiter-Nanoelektronik
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920 1 _ |0 I:(DE-82)080009_20140620
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|l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology
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970 _ _ |a VDB:(DE-Juel1)123489
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a talk
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980 _ _ |a I:(DE-82)080009_20140620
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-9-20110106
981 _ _ |a I:(DE-Juel1)VDB881

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Marc 21