Journal Article

PreJuSER-12061

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Coexistence of filamentary and homogeneous switching in Fe-doped SrTiO3 thin film memristive devices

Münstermann, R.FZJ* ; Menke, T.FZJ* ; Dittmann, R.FZJ* ; Waser, R.FZJ*

2010
Wiley-VCH Weinheim

This record in other databases:      

Please use a persistent id in citations: doi:10.1002/adma.201001872

Keyword(s): Computer Storage Devices (MeSH) ; Electric Impedance (MeSH) ; Equipment Design (MeSH) ; Equipment Failure Analysis (MeSH) ; Iron: chemistry (MeSH) ; Membranes, Artificial (MeSH) ; Oxides: chemistry (MeSH) ; Signal Processing, Computer-Assisted: instrumentation (MeSH) ; Strontium: chemistry (MeSH) ; Titanium: chemistry (MeSH) ; Membranes, Artificial ; Oxides ; strontium titanium oxide ; Iron ; Strontium ; Titanium ; J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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