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@INPROCEEDINGS{Zhao:12090,
      author       = {Zhao, Q. T. and Yu, W. and Zhang, B. and Lopes, J. M. J.
                      and Buca, D. and Minamisawa, R. A. and Durgun Özben, E. and
                      Luptak, R. and Feste, S. F. and Nichau, A. and Schubert, J.
                      and Holländer, B. and Hartmann, J.M. and Bourdelle, K.K.
                      and Kernevez, N. and Mantl, S.},
      title        = {{H}igh mobility {S}i-{G}e channel and high-k materials for
                      {N}ano{MOSFET}s},
      reportid     = {PreJuSER-12090},
      year         = {2010},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {5th International SiGe Technology and Device Meeting (ISTDM
                      2010)},
      booktitle     = {5th International SiGe Technology and
                       Device Meeting (ISTDM 2010)},
      month         = {May},
      date          = {2010-05-24},
      organization  = {Stockholm, Schweden, 24 May 2010},
      subtyp        = {Invited},
      cin          = {IBN-1 / JARA-FIT},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/12090},
}