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Conference Presentation (Invited) PreJuSER-12090
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High mobility Si-Ge channel and high-k materials for NanoMOSFETs

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2010

5th International SiGe Technology and Device Meeting (ISTDM 2010)
Seminar, Stockholm, SchwedenStockholm, Schweden, 24 May 20102010-05-24


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
 Record created 2012-11-13, last modified 2018-02-08
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