%0 Journal Article
%A Kordos, P.
%A Fox, Alfred
%A Kúdela, R
%A Mikulics, Martin
%A Stoklas, R
%A Gregušová, D
%T GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD
%J Semiconductor science and technology
%V 27
%N 11
%C Bristol
%I IOP Publ.
%M FZJ-2012-00160
%P 115002 -
%D 2012
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000310447200002
%R 10.1088/0268-1242/27/11/115002
%U https://juser.fz-juelich.de/record/127093