Journal Article

FZJ-2012-00160

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Kordos, P. (Corresponding author) ; Fox, A.FZJ* ; Kúdela, R. ; Mikulics, M.FZJ* ; Stoklas, R. ; Gregušová, D.

2012
IOP Publ. Bristol

This record in other databases:  

Please use a persistent id in citations: doi:10.1088/0268-1242/27/11/115002

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Contributing Institute(s):

1. JARA-FIT (JARA-FIT)
2. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF2-899) (POF2-899)

Appears in the scientific report 2012

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Database coverage:
Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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