TY  - JOUR
AU  - Kordos, P.
AU  - Fox, Alfred
AU  - Kúdela, R
AU  - Mikulics, Martin
AU  - Stoklas, R
AU  - Gregušová, D
TI  - GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD
JO  - Semiconductor science and technology
VL  - 27
IS  - 11
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2012-00160
SP  - 115002 -
PY  - 2012
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000310447200002
DO  - DOI:10.1088/0268-1242/27/11/115002
UR  - https://juser.fz-juelich.de/record/127093
ER  -