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@ARTICLE{Kordos:127093,
      author       = {Kordos, P. and Fox, Alfred and Kúdela, R and Mikulics,
                      Martin and Stoklas, R and Gregušová, D},
      title        = {{G}a{A}s-based metal-oxide-semiconductor field-effect
                      transistor with aluminum oxide gate insulator prepared in
                      situ by {MOCVD}},
      journal      = {Semiconductor science and technology},
      volume       = {27},
      number       = {11},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2012-00160},
      pages        = {115002 -},
      year         = {2012},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {899 - ohne Topic (POF2-899)},
      pid          = {G:(DE-HGF)POF2-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000310447200002},
      doi          = {10.1088/0268-1242/27/11/115002},
      url          = {https://juser.fz-juelich.de/record/127093},
}