%0 Conference Proceedings
%A Wirths, Stephan
%A Buca, Dan Mihai
%A Tiedemann, Andreas
%A Bernardy, Patric
%A Holländer, Bernhard
%A Stoica, Toma
%A Mussler, Gregor
%A Breuer, U
%A Mantl, Siegfried
%T Low temperature RPCVD epitaxial growth of Si 1-xGe x and Ge using Si2H6 and Ge2H6
%M FZJ-2012-00184
%D 2012
%B International Silicon-Germanium Technology and Device Meeting
%C 4 Jun 2012 - 6 Dec 2012, UC Berkeley (USA)
Y2 4 Jun 2012 - 6 Dec 2012
M2 UC Berkeley, USA
%F PUB:(DE-HGF)26
%9 Proceedings
%U https://juser.fz-juelich.de/record/127118