Home > Publications database > Low temperature RPCVD epitaxial growth of Si 1-xGe x and Ge using Si2H6 and Ge2H6
 
Proceedings FZJ-2012-00184
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Low temperature RPCVD epitaxial growth of Si 1-xGe x and Ge using Si2H6 and Ge2H6

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2012

International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, UC BerkeleyUC Berkeley, USA, 4 Jun 2012 - 6 Dec 20122012-06-042012-12-06

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012
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JARA > JARA > JARA-JARA\-FIT
Document types > Books > Proceedings
Institute Collections > PGI > PGI-9
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 Record created 2012-12-03, last modified 2021-01-29
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